Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
A quantitative study of the influence of a magnetic field on a beam of ballistic electrons in a hot-electron transistor has been undertaken. A field parallel to the direction of electron injection had virtually no effect. A perpendicular field caused the electrons to be collected at lower energies. A B2 dependence of peak collection energy on magnetic field was observed, as one would predict from a semiclassical description, but with an effective mass 2-3 times larger than one would expect. Possible implications are discussed. © 1989 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011