Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
A mechanism for the modification of porous ultra low-k (ULK) and extreme ultra low-k (EULK) SiCOH-based materials is proposed. This is achieved by correlating film damage on a patterned structure measured by angular resolved x-ray photoelectron spectroscopy (ARXPS) with corresponding changes in reactive species radical density and ion current in the plasma measured by optical emission spectroscopy (OES), rare gas actinometry, and modeling. Line-to-line electrical leakage and capacitance data of nested line structures exposed to downstream ash plasmas suggest that other etching steps during back-end-of-the-line (BEOL) dual damascene processing are also critical for the overall modification induced to these materials. © 2007 Elsevier B.V. All rights reserved.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Sung Ho Kim, Oun-Ho Park, et al.
Small
Imran Nasim, Melanie Weber
SCML 2024
A. Krol, C.J. Sher, et al.
Surface Science