Mark W. Dowley
Solid State Communications
Defects introduced by reactive-ion etching (RIE) and plasma etching (PE) using deuterium have been studied in boron-doped silicon with the photoluminescence (PL) technique. We have observed a set of broad luminescence bands in the below-bandgap range between 1.05 and 0.8 eV. These bands change in intensity as well as in photon energy with annealing. We attribute all these PL bands to electron-hole recombination in heavily damaged regions, where electrons and holes can be localized in potential wells caused by the strain surrounding the microscopic hydrogen defects. © 1989.
Mark W. Dowley
Solid State Communications
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Ellen J. Yoffa, David Adler
Physical Review B