Microscopic identification and electronic structure of a di-hydrogen vacancy complex in silicon by optical detection of magnetic resonance
- W.M. Chen
- O.O. Awadelkarim
- et al.
- 1990
- Physical Review Letters
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15 results for J.L. Lindstrom
Surface Modifications of Electronic Materials Induced by Plasma Etching
- G.S. Oehrlein
- S.W. Robey
- et al.
- 2019
- JES
Electrical studies on annealed d2 plasma-exposed silicon
- A. Henry
- O.O. Awadelkarim
- et al.
- 2019
- JES
Reactive Ion Etching of Silicon Nitride Deposited by Different Methods in CF4/H2 Plasmas
- W.A. Lanford
- 2019
- JES
Electrically active point defects in n-type 4H-SiC
- J. Doyle
- M.K. Linnarsson
- et al.
- 1998
- Journal of Applied Physics
A photoluminescence study of CF4 reactive-ion-etched silicon: Various process conditions and magnetically enhanced etching
- A. Henry
- B. Monemar
- et al.
- 1993
- Journal of Applied Physics
Photoluminescence characterization of plasma exposed silicon surfaces
- A. Henry
- B. Monemar
- et al.
- 1991
- Journal of Applied Physics
Reactive-ion- and plasma-etching-induced extended defects in silicon studied with photoluminescence
- H. Weman
- J.L. Lindström
- et al.
- 1990
- Journal of Applied Physics
Effects of deuterium plasmas on silicon near-surface properties
- J.L. Lindström
- G.S. Oehrlein
- et al.
- 1989
- Journal of Applied Physics
Electrical studies on plasma and reactive-ion-etched silicon
- A. Henry
- O.O. Awadelkarim
- et al.
- 1989
- Journal of Applied Physics