Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
We present a high-resolution x-ray-scattering study of the temperature-dependent structure of Si(111) vicinally miscut by 4°along the 110 direction. At temperatures below 1159 K, the surface phase separates into flat 7×7 terraces and densely stepped regions, in agreement with previous reports. The angle between the phase-separated regions shows a temperature dependence consistent with both entropic and strain-induced step-step repulsive interactions. At temperatures above 1159 K, the surface is shown to exist as a single, logarithmically rough phase; the observed scattering line shapes demonstrate the presence of a long-range step-step repulsion of a magnitude comparable to the entropic repulsion. © 1995 The American Physical Society.
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures