About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Active Matrix Liquid Crystal Displays Technology and Applications 1997
Conference paper
Anomalous interface degradation of a-Si:H TFTs during LCD lifetime
Abstract
In this paper, we present some unpublished results for the first time, on an anomalous a-Si:H/SiNx interface degradation that is to a first order, independent of increasing temperature stress. This interface degradation produces significant impact on the linear region drain current and the ability to charge the pixel capacitance during the gate access time. This anomalous behavior can only be explained by an electric field coupled two carrier transport mechanism occuring at the two interfaces of the gate dielectric. The experimental and modeling results to be discussed in this paper clearly shows that if metastable defect creation is suspect of being present, then the far majority of the threshold voltage shift observed here is dominated by charge injection and transport in the gate insulator. ©2004 Copyright SPIE - The International Society for Optical Engineering.