Shu-Jen Han, Satoshi Oida, et al.
DRC 2013
Side-gated bulk Si nMOSFETs with Si3N4 shallow trench isolation (STI) have been previously demonstrated to have significantly reduced off-currents and improved subthreshold characteristics [1, 2]. The improvement is shown to be due to accumulation of the Si body with the holes as the polysilicon side-gate surrounding the body as a guard ring is negatively biased (Fig 1). The threshold voltage (VT) of the narrow channel devices can be dynamically controlled by the side-gate (Fig 2) voltage (Vside) in a wide range [2, 3], mainly due to the increase in the channel energy barrier (Fig. 3) [4]. © 2013 IEEE.
Shu-Jen Han, Satoshi Oida, et al.
DRC 2013
Mustafa B. Akbulut, Faruk Dirisaglik, et al.
DRC 2014
Adam Cywar, Jing Li, et al.
Nanotechnology
Mustafa B. Akbulut, Faruk Dirisaglik, et al.
IEEE T-ED