Mott transition field effect transistor: Experimental results

Abstract

In this paper we describe the fabrication of oxide based devices similar in architecture to a conventional FRT with source, drain, and gate electrodes and a channel. This distinctive characteristic of our device is the use of a channel material capable of undergoing a field-induced Molt insulator-metal transition at room temperature. Lithographic techniques developed for oxide materials have been combined with pulsed laser deposition of perovskite materials onto single-crystal strontium titanate (STO) substrates to fabricate these devices. Materials chosen for j the Mott transition channel include La2CuO4 (LCO) and YBCO, p-type; and Nd:CuO.i, n-type. © 1999 Materials Research Society.