Mechanism of silicon surface roughening by reactive ion etching

Abstract

Rough silicon surfaces resulting from CF4 reactive ion etching have been studied by scanning electron microscopy/scanning Auger microscopy and x‐ray photoemission spectroscopy. The experimental data demonstrate a roughening mechanism based on laterally non‐uniform etch rates due to the existence of involatile surface residues. Copyright © 1986 John Wiley & Sons Ltd.