Conference paper
Compression for data archiving and backup revisited
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Rough silicon surfaces resulting from CF4 reactive ion etching have been studied by scanning electron microscopy/scanning Auger microscopy and x‐ray photoemission spectroscopy. The experimental data demonstrate a roughening mechanism based on laterally non‐uniform etch rates due to the existence of involatile surface residues. Copyright © 1986 John Wiley & Sons Ltd.
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
T.N. Morgan
Semiconductor Science and Technology