Silicon-oxynitride (SiON) for photonic integrated circuits
H. Salemink, F. Horst, et al.
Materials Research Society Symposium - Proceedings
Temperature rises were measured on cleaved, uncoated mirror facets of junction-side-up mounted (Al)GaInP laser diodes as a function of the injection current by Raman spectroscopy via the Stokes/anti-Stokes phonon line intensity ratio and the phonon line shift as well as by reflectance modulation as a novel application for laser mirror characterization. Below the threshold current the temperature rise is due to Joule heating of the drive current across the ohmic resistor and is ΔT≅35 K at threshold. Above threshold a significant power-dependent heating caused by absorption of laser radiation is superimposed. In this regime the temperature increase is considerably high, i.e., ΔT≥100 K at 4 mW for 5-μm-wide ridge lasers. The different measurement techniques have produced consistent data.
H. Salemink, F. Horst, et al.
Materials Research Society Symposium - Proceedings
David J. Webb, M. Benedict, et al.
SPIE Optics, Electro-Optics, and Laser Applications in Science and Engineering 1991
H. Jaeckel, H.P. Meier, et al.
Applied Physics Letters
P.W. Epperlein, P. Buchmann, et al.
Applied Physics Letters