Regrowth of InP by MOVPE on dry-etched heterostructures of InP-GaInAsP

Abstract

The MOVPE growth behavior of InP on masked and dry-etched ridges in InP/InGaAsP heterostructures grown on (001)-oriented InP substrates has been studied by scanning electron and transmission electron microscopy. It is found that the orientation of the ridges is critical for obtaining good planarization. For ridges oriented along the [110] direction, the growth is uniform and defect-free, leading to a plane surface. In the orthogonal [110] direction, 60° twins are nucleated adjacent to the walls of the ridge. The resultant high density of (111)/(001) facets enhances the growth rate in these regions, leading to projecting walls at the sides of the ridge. © 1993.