In_0.53Ga_0.47As/In_0.52Al_0.48A s SACM APDs for single photon detection

Abstract

In recent years, several commercially available avalanche photodiodes (APDs) were evaluated for their single photon counting performance. As such, single photon counting at 1.52 μm in custom Separate-Absorption-Charge-Multiplication (SACM) APDs with In0.53Ga0.47As absorption and In0.52Al0.48As multiplication layer was demonstrated. This paper optimizes the operating parameters usch as temperature, excess bias and discriminator threshold for better single photon detection performance.