Study of dark counts in Geiger mode in _0.53Ga _0.47As / in _0.52Al _0.48gAs SACM APDs

Abstract

The origin of dark count rate in Geiger mode In 0.53Ga 0.47As / In 0.52Al 0.48As separate-absorption- charge-multiplication (SACM) avalanche photo diodes (APD) was analyzed. The device was tested using the gated mode of operation. The calculated normalized dark count rate as a function of temperature assuming band-to-band tunneling in the multiplication region was shown. It was found that the temperature dependence of dark count rate is primarily due to the temperature dependence of the band gap of In 0.52Al 0.48As.