Mechanisms and models of Si film growth from SiH4 and Si2H6
S. Gates, S.K. Kulkarni, et al.
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
We have studied the D2 desorption and NH3 adsorption on polycrystalline GaN surfaces using time-of-flight detection of recoiled H+ and D+ ions. Two surface deuterium states characterized by different thermal stability are identified. Rate abalysis for isothermal D2 desorption is performed near 250°C, which we attribute to desorption from Ga sites. We assign the higher temperature D2 desorption state decomposing near 500°C to desorption from N sites. Both clean and D-terminated GaN surfaces are quite reactive towards NH3 adsorption. We observed that H D exchange during NH3 exposure occurs rapidly at room temperature. © 1995.
S. Gates, S.K. Kulkarni, et al.
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
S. Gates, G. Dubois, et al.
JES
D.D. Koleske, S. Gates
Applied Physics Letters
S. Gates
Journal of Physical Chemistry