Conference paper
Mechanisms and models of Si film growth from SiH4 and Si2H6
S. Gates, S.K. Kulkarni, et al.
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
Time-of-flight direct recoiling (DR) measurements of surface hydrogen coverage (θH) are made in situ during chemical beam epitaxy growth of Si from Si2H6 on Si(100) as a function of temperature and disilane flux. Temperatures (T) of 300-900°C and fluxes from 1015 to 1017 molecules cm-2 s-1 are used. Limited data for SiH4 are also presented. Predictions of θH from a steady state kinetic model are compared with the measurements, enabling the reactive sticking probability (S) of Si 2H6 to be estimated at T≳500°C.
S. Gates, S.K. Kulkarni, et al.
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
S. Gates, C.M. Chiang
Chemical Physics Letters
T. Dalton, N. Fuller, et al.
IITC 2004
S. Gates, D.D. Koleske
Applied Physics Letters