90 nm SiCOH technology in 300 mm manufacturing

Abstract

A 90 nm Cu/SiCOH 10 level BEOL integration running in a 300 mm Foundry CMOS production environment is presented. A SiCOH film with k∼3 with Cu metallization was used to build up to 10 levels of multilevel interconnections. The yield, reliability and related circuit performance of this technology is similar to or better than an equivalent 90 nm SiOF technology running in the same fab. With SiCOH as the dielectric, the inter and intralevel capacitance, BEOL loaded ring oscillator stage delay and the power consumption of advanced microprocessors was reduced by approximately 15 to 30% compared to a 90 nm SiOF technology running in the same fab. © 2005 Materials Research Society.