M. Liehr, S. Gates, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
The abstraction of chemisorbed deuterium (D) on Si(100) by atomic hydrogen (Hat) is studied in real time. The surface H and D coverages are measured by mass analyzing the recoiled H+ and D+ ion signals during the abstraction reaction. We find that Hat efficiently removes adsorbed D on Si(100) with a low activation energy of 0.8±0.6 kcal/mol and a reaction probability that is 0.36 times the Hat adsorption rate on clean Si(100). © 1993 American Institute of Physics.
M. Liehr, S. Gates, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Willi Volksen, Theo Frot, et al.
IITC/MAM 2011
S. Gates, D.D. Koleske
Thin Solid Films
D.D. Koleske, S. Gates
The Journal of Chemical Physics