S. Gates, G. Dubois, et al.
JES
The abstraction of chemisorbed deuterium (D) on Si(100) by atomic hydrogen (Hat) is studied in real time. The surface H and D coverages are measured by mass analyzing the recoiled H+ and D+ ion signals during the abstraction reaction. We find that Hat efficiently removes adsorbed D on Si(100) with a low activation energy of 0.8±0.6 kcal/mol and a reaction probability that is 0.36 times the Hat adsorption rate on clean Si(100). © 1993 American Institute of Physics.
S. Gates, G. Dubois, et al.
JES
D.D. Koleske, S. Gates
Applied Surface Science
D. Edelstein, H.S. Rathore, et al.
IRPS 2004
D. Edelstein, H.S. Rathore, et al.
IRPS 2004