Mechanisms and models of Si film growth from SiH4 and Si2H6
S. Gates, S.K. Kulkarni, et al.
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
The abstraction of chemisorbed deuterium (D) on Si(100) by atomic hydrogen (Hat) is studied in real time. The surface H and D coverages are measured by mass analyzing the recoiled H+ and D+ ion signals during the abstraction reaction. We find that Hat efficiently removes adsorbed D on Si(100) with a low activation energy of 0.8±0.6 kcal/mol and a reaction probability that is 0.36 times the Hat adsorption rate on clean Si(100). © 1993 American Institute of Physics.
S. Gates, S.K. Kulkarni, et al.
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
M. Liehr, S. Gates, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
D.D. Koleske, S. Gates, et al.
Surface Science
D.D. Koleske, S. Gates, et al.
Thin Solid Films