Franco Stellari, Ernest Y. Wu, et al.
IEEE Electron Device Letters
Noninvasive characterization of CMOS ring oscillator with 50 ps resolution is obtained by exploiting the broad-band infrared emission from switching transistors. A fast silicon single-photon avalanche-diode (SPAD) is used to attain high sensitivity and time resolution. Switching transitions of both n- and p-channel MOSFETs are measured and the main features in the circuit operation are characterized. Systematic variations and increased jitter of switching transitions due to phase noise are accurately measured.
Franco Stellari, Ernest Y. Wu, et al.
IEEE Electron Device Letters
Andrea Bahgat Shehata, Franco Stellari, et al.
ISTFA 2014
Peilin Song, Franco Stellari, et al.
IEEE ITC 2004
Peilin Song, Franco Stellari, et al.
LEOS 2003