Publication
IRPS 2015
Conference paper

Self-heating characterization of FinFET SOI devices using 2D time resolved emission measurements

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Abstract

Self-heating of FinFET devices is a reliability concern, especially for large devices with dense arrays on SOI. In this paper, we leverage the Picosecond time resolution of Time-Resolved Emission (TRE) measurements to quantitatively measure the modulation of the off-state leakage current due to self-heating in individual FinFETs fabricated in SOI technology. This provides the first direct measurement of the self-heating from individual FinFET devices.

Date

26 May 2015

Publication

IRPS 2015

Authors

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