Sophie Verdonckt-Vandebroek, Bernard S. Meyerson, et al.
IEEE Transactions on Electron Devices
We report the successful fabrication and operation of the first modulation-doped SiGe-channel p-MOSFET's, A novel device design consisting of a graded SiGe channel, an n+ polysilicon gate, and p+ modulation doping is used. The boron-doped layer is placed underneath the undoped SiGe channel to achieve the desired threshold voltage without degrading the mobility. The low-field hole mobility for a channel graded from 25% to 15% germanium is 220 cm2/V – s at 300 K and increases to 980 cm2/V – s at 82 K. © 1991 IEEE
Sophie Verdonckt-Vandebroek, Bernard S. Meyerson, et al.
IEEE Transactions on Electron Devices
Sophie Verdonckt-Vandebroek, Bernard S. Meyerson, et al.
IEEE Transactions on Electron Devices
James S. Dunn, David C. Ahlgren, et al.
IBM J. Res. Dev
Michael J. McCarthy, Bernard S. Meyerson, et al.
Journal of Applied Physics