Design and performance considerations for sub-0.1 μm double-gate SOI MOSFETs
- H.-S. Wong
- D.J. Frank
- et al.
- 1994
- IEDM 1994
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64 results for J.M.C. Stork
Optimization of SiGe HBT Technology for High Speed Analog and Mixed-Signal Applications
- D.L. Harame
- J.M.C. Stork
- et al.
- 1993
- IEDM 1993
Vertical Profile Optimization of Very High Frequency Epitaxial Si- and SiGe-Base Bipolar Transistors
- E.F. Crabbé
- B.S. Meyerson
- et al.
- 1993
- IEDM 1993
A high performance epitaxial SiGe-base ECL BiCMOS technology
- D.L. Harame
- E.F. Crabbe
- et al.
- 1992
- IEDM 1992
Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors
- E. Zanoni
- E.F. Crabbe
- et al.
- 1992
- IEDM 1992
Single crystal emitter gap for epitaxial Si- and SiGe-base transistors
- J.H. Comfort
- E.F. Crabbe
- et al.
- 1991
- IEDM 1991
Profile scaling constraints for ion-implanted and epitaxial bipolar technology designed for 77 K operation
- John D Cressler
- Emmanuel F Crabe
- et al.
- 1991
- IEDM 1991
Epitaxial-base double-poly self-aligned bipolar transistors
- E. Ganin
- T.C. Chen
- et al.
- 1990
- IEDM 1990
SiGe-base heterojunction bipolar transistors: Physics and design issues
- G.L. Patton
- J.M.C. Stork
- et al.
- 1990
- IEDM 1990
Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technology
- J.H. Comfort
- G.L. Patton
- et al.
- 1990
- IEDM 1990