Conference paper
23 ps/2.1 mW ECL gate
Kai-Yap Toh, C.T. Chuang, et al.
ISSCC 1989
Heterojunction bipolar transistors with hydrogenated amorphous silicon (a-Si) contact layers on crystalline silicon (c-Si) substrates are reported. In particular, current gains exceeding 500 were achieved by heterojunction contacts further including embedded homo-junctions comprised of hydrogenated crystalline silicon (c-Si), having thicknesses much shorter than the diffusion length of minority carriers. The a-Si and c-Si layers were grown by plasma-enhanced chemical vapour deposition at temperatures close to 200°C. © 2012 The Institution of Engineering and Technology.
Kai-Yap Toh, C.T. Chuang, et al.
ISSCC 1989
G. Shahidi, D.D. Tang, et al.
IEDM 1991
A. Hartstein, T.H. Ning, et al.
Surface Science
J.C. Sturm, Y. Huang, et al.
ULIS 2011