Bahman Hekmatshoar
AM-FPD 2015
Heterojunction bipolar transistors with hydrogenated amorphous silicon (a-Si) contact layers on crystalline silicon (c-Si) substrates are reported. In particular, current gains exceeding 500 were achieved by heterojunction contacts further including embedded homo-junctions comprised of hydrogenated crystalline silicon (c-Si), having thicknesses much shorter than the diffusion length of minority carriers. The a-Si and c-Si layers were grown by plasma-enhanced chemical vapour deposition at temperatures close to 200°C. © 2012 The Institution of Engineering and Technology.
Bahman Hekmatshoar
AM-FPD 2015
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ULIS 2011
Stephen W. Bedell, Davood Shahrjerdi, et al.
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