About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Physical Review B
Paper
Dielectric band structure of crystals: General properties and calculations for silicon
Abstract
We develop the dielectric band-structure method, originally proposed by Baldereschi and Tosatti, for the description of microscopic electronic screening in crystals. Some general properties are examined first, including the requirements of causality and stability. The specific test case of silicon is then considered. Dielectric bands are calculated, according to several different prescriptions for the construction of the dielectric matrix. It is shown that the results allow a very direct appraisal of the screening properties of the system, as well as of the quality of the dielectric model adopted. The electronic charge displacement induced by 25 and X3 phononlike displacements of the atoms is also calculated and compared with the results of existent fully self-consistent calculations. Conclusions are drawn on the relative accuracies of the dielectric band structures. © 1981 The American Physical Society.