Kristin Schmidt, Hitoshi Osaki, et al.
SPIE Advanced Lithography 2016
We report a systematic study of the feasibility of using directed self-Assembly (DSA) in real product design for 7-nm fin field effect transistor (FinFET) technology. We illustrate a design technology co-optimization (DTCO) methodology and two test cases applying both line/space type and via/cut type DSA processes. We cover the parts of DSA process flow and critical design constructs as well as a full chip capable computational lithography framework for DSA. By co-optimizing all process flow and product design constructs in a holistic way using a computational DTCO flow, we point out the feasibility of manufacturing using DSA in an advanced FinFET technology node and highlight the issues in the whole DSA ecosystem before we insert DSA into manufacturing.
Kristin Schmidt, Hitoshi Osaki, et al.
SPIE Advanced Lithography 2016
Jing Guo, Dustin W. Janes, et al.
MEMS/NEMS/MOEMS 2019
Hsinyu Tsai, Hiroyuki Miyazoe, et al.
IEDM 2014
Stefano Ambrogio, Pritish Narayanan, et al.
VLSI-TSA 2020