Mechanisms of Electromigration Damage in Cu Interconnects
- C. K. Hu
- Lynne Gignac
- et al.
- 2018
- IEDM 2018
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10 results for G. Lian
Fully aligned via integration for extendibility of interconnects to beyond the 7 nm node
- Benjamin D. Briggs
- C.B. Peethala
- et al.
- 2017
- IEDM 2017
Line Resistance Reduction in Advanced Copper Interconnects
- Chih-Chao Yang
- T. Standaert
- et al.
- 2017
- IEEE Electron Device Letters
Technology challenges and enablers to extend Cu metallization to beyond 7 nm node
- Takeshi Nogami
- H. Huang
- et al.
- 2019
- VLSI Technology 2019
Process Challenges in Fully Aligned Via Integration for sub 32 nm Pitch BEOL
- Benjamin D. Briggs
- C.B. Pcethala
- et al.
- 2018
- IITC 2018
Future on-chip interconnect metallization and electromigration
- C. K. Hu
- James Kelly
- et al.
- 2018
- IRPS 2018
Comparison of key fine-line BEOL metallization schemes for beyond 7 nm node
- Takeshi Nogami
- X. Zhang
- et al.
- 2017
- VLSI Technology 2017
Electromigration and resistivity in on-chip Cu, Co and Ru damascene nanowires
- C. K. Hu
- James Kelly
- et al.
- 2017
- IITC 2017
Cobalt/copper composite interconnects for line resistance reduction in both fine and wide lines
- Takeshi Nogami
- Raghuveer Patlolla
- et al.
- 2017
- IITC 2017
Microstructure modulation for resistance reduction in copper interconnects
- Chih-Chao Yang
- Terry A. Spooner
- et al.
- 2017
- IITC 2017