Advanced BEOL Materials, Processes, and Integration to Reduce Line Resistance of Damascene Cu, Co, and Subtractive Ru Interconnects
- Takeshi Nogami
- Oleg Gluschenkov
- et al.
- 2022
- VLSI Technology and Circuits 2022
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30 results for H. Huang
Electromigration and Line R of Graphene Capped Cu Dual Damascene Interconnect
- T. Nogami
- S. Nguyen
- et al.
- 2021
- IEDM 2021
Fully aligned via integration for extendibility of interconnects to beyond the 7 nm node
- Benjamin D. Briggs
- C.B. Peethala
- et al.
- 2017
- IEDM 2017
Exploring the Limits of Cobalt Liner Thickness in Advanced Copper Interconnects
- Nicholas A. Lanzillo
- Kisik Choi
- et al.
- 2019
- IEEE Electron Device Letters
Line Resistance Reduction in Advanced Copper Interconnects
- Chih-Chao Yang
- T. Standaert
- et al.
- 2017
- IEEE Electron Device Letters
Selective deposition of AlOx for Fully Aligned Via in nano Cu interconnects
- Son Van Nguyen
- Hosadurga Shobha
- et al.
- 2021
- IITC 2021
Dual Damascene BEOL Extendibility With Cu Reflow / Selective TaN And Co/Cu Composite
- P. Bhosale
- N. Lanzillo
- et al.
- 2021
- VLSI Technology 2021
Novel low k Dielectric materials for nano device interconnect technology
- Son Van Nguyen
- Hosadurga Shobha
- et al.
- 2020
- VLSI-TSA 2020
In-situ preclean run path impact on selective cobalt cap deposition and electromigration
- Matthew Shoudy
- Hosadurga Shobha
- et al.
- 2020
- ASMC 2020
Composite Interconnects for High-Performance Computing beyond the 7nm Node
- P. Bhosale
- S. Parikh
- et al.
- 2020
- VLSI Technology 2020