Publication
ECS Meeting 2016
Conference paper

CMOS compatible high performance IIIV devices: Opportunities and challenges

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Abstract

Self-aligned InGaAs channel MOSFET has been demonstrated on both InP and Si substrate using CMOS compatible device structure and process flow. Peak transconductance GMSAT over 2200 μS/μm has been achieved, at LEFF = 30 nm and supply voltage VDD = 0.5 V. These processes and devices are well-suited for future generations of high-performance CMOS applications at short gate lengths and tight gate pitches.

Date

29 May 2016

Publication

ECS Meeting 2016

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