Alwin E. Michel, W. Rausch, et al.
Applied Physics Letters
The effects of both planar and axial channeling on the profile of 5-keV boron ions implanted into (100) oriented silicon wafers are demonstrated. A tilt angle of 12°from the (100) axis in a]] random" crystallographic direction is required to minimize the (100) axial channeling tail. It is also shown that the effect of channeling along 100 planar channels produces a negligible addition to the channeling tail, whereas channeling along the (110) planar channels produces a measurable contribution. Implantation through a thin, 8-nm, thermally grown silicon dioxide layer with the ion beam aligned along the (100) direction produces an ion profile comparable to an offset of 9°in a random direction.
Alwin E. Michel, W. Rausch, et al.
Applied Physics Letters
G. Burns, Alwin E. Michel, et al.
IEEE T-ED
J.N. Burghartz, S. Mader, et al.
IEDM 1989
W.K. Chu, S. Mader, et al.
Nuclear Instruments and Methods