Damage enhanced diffusion

Abstract

The anomalous transient diffusion obtained during anneal of ion implanted boron is a major contribution to the junction depth. The enhanced displacement is produced by a supersaturation of interstitial silicon atoms generated by the implantation process which in turn is regulated by the nucleation, formation, and annihilation of extended defects. The effects of the implantation damage and the formation of extended defects on the diffusion and activation of boron implanted into crystalline and preamorphized silicon are reviewed and some new results are described.