Formation and Analysis of Shallow Arsenic Profiles

Abstract

Shallow arsenic implants were activated by furnace and rapid thermal annealing (RTA). Comparisons of junction depths measured by secondary ion mass spectrometry (SIMS) and spreading resistance (SR) showed SIMS values 50-90 nm deeper than SR values, due to ion knock-on during SIMS profiling. © 1986, American Chemical Society. All rights reserved. © 1988, The Institution of Electrical Engineers. All rights reserved.