Mark W. Dowley
Solid State Communications
We present recent experiments on carbon nanotube field-effect transistors and their characteristics and compare the performance of these devices with state-of-the-art silicon MOSFETs. By reducing the gate dielectric film thickness and working with high-k dielectric materials such as HfO2, we are able to effectively reduce the operational voltages below 1 V. The electrical characteristics obtained clearly indicate excellent device performance in both the on- and off-state wit of the nanotube transistor. On/off-current ratios of almost 104 are achieved along with a maximum transconductance of around 425 μS/μm and drive currents of 270 μA/μm at Vgs - Vth = -0.6 V. Since device parameters are not fully optimized, significant performance improvements can be expected making carbon nanotubes particularly promising as building blocks for future nanoelectronics. © 2002 Elsevier Science B.V. All rights reserved.
Mark W. Dowley
Solid State Communications
E. Burstein
Ferroelectrics
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures