Conference paperHigh-performance sub-0.08 μm CMOS with dual gate oxide and 9.7 ps inverter delayM. Hargrove, S.W. Crowder, et al.IEDM 1998
PaperKinetic model for the chemical vapor deposition of tungsten in the silane reduction processJulian J. HsiehJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
