Analysis of the Pockels effect in ferroelectric barium titanate thin films on Si(0 0 1)

Abstract

High-quality epitaxial BaTiO<inf>3</inf> (BTO) on Si has emerged as a highly promising material for future electro-optic (EO) devices based on BTO's large effective Pockels coefficient. We report on the EO response of BTO films deposited on Si by molecular beam epitaxy (MBE), and characterize the structure of these films by reflection high-energy electron diffraction and X-ray diffraction. O<inf>2</inf> rapid thermal anneal at 600°C for 30 min ensures full oxidation of BTO for minimal leakage current with minimal change in crystalline structure.