An integration path for gate-first UTB III-V-on-insulator MOSFETs with silicon, using direct wafer bonding and donor wafer recycling
- Lukas Czornomaz
- N. Daix
- et al.
- 2012
- IEDM 2012
Publications
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39 results for Heinz Siegwart
Control of interfacial structure and electrical properties in MBE grown single crystalline SrTiO3 gate dielectrics on Si(100)
- Gerd Norga
- Chiara Marchiori
- et al.
- 2006
- MRS Spring Meeting 2006
An integrated optical modulator operating at cryogenic temperatures
- Felix Eltes
- Gerardo E. Villarreal-Garcia
- et al.
- 2020
- Nature Materials
Direct observation of the alignment of ferromagnetic spins by antiferromagnetic spins
- F. Nolting
- A. Scholl
- et al.
- 2000
- Nature
Barium-titanate integrated with silicon photonics for ultra-efficient electro-optical performance
- Stefan Abel
- Thilo Stöferle
- et al.
- 2015
- ECOC 2015
An InGaAs on Si platform for CMOS with 200 mm InGaAs-OI substrate, gate-first, replacement gate planar and FinFETs down to 120 nm contact pitch
- V. Djara
- Veeresh Deshpande
- et al.
- 2015
- VLSI Technology 2015
Wafer bonding: An integration route for hybrid III-V/SiGe CMOS on 300mm
- Lukas Czornomaz
- Nicolas Daix
- et al.
- 2014
- ISSWB 2014
III/V layer growth on Si and Ge surfaces for direct wafer bonding as a path for hybrid CMOS
- Emanuele Uccelli
- Nicolas Daix
- et al.
- 2014
- ITNG 2014
Co-integrating high mobility channels for future CMOS, from substrate to circuits
- Lukas Czornomaz
- Nicolas Daix
- et al.
- 2014
- IPRM 2014
Electro-optical active barium titanate thin films in silicon photonics devices
- Stefan Abel
- Thilo Stöferle
- et al.
- 2013
- IPRSN 2013