The DX centre
T.N. Morgan
Semiconductor Science and Technology
A structural and mechanistic model for initial room temperature Fe epitaxy on Cu(100) is presented, based on scanning tunneling microscopy data. Changes in Fe atom attachment kinetics with coverage θ yield several growth regimes: Fe incorporation into the surface by atomic exchange with Cu (θ < 0.2), growth of first-layer Fe islands (0.2 < θ < 0.7), and simultaneous layer-1 and layer-2 growth (0.7 < θ < 2). These results reconcile qualitative disparities in previous interpretations of experimental results. © 1994.
T.N. Morgan
Semiconductor Science and Technology
Ellen J. Yoffa, David Adler
Physical Review B
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020