Thermally Developable, Positive Resist Systems with High Sensitivity

Abstract

Poly(4-chloro and bromophthalaldehydes) sensitized with triphenylsulfonium hexafluoroantimonate develop to the substrate upon postbaking at >100°C for 1 min after exposure to less than 1 mJ/cm2 of 254 nm radiation or less than 1 μC/cm2 of 18 keV E-beam radiation, providing submicron resolution with vertical wall profiles and full thickness retention. The resists do not self-develop under these exposure conditions and do not exhibit any thermal flow when postbaked at 160°C. © 1989, The Electrochemical Society, Inc. All rights reserved.