Julien Autebert, Aditya Kashyap, et al.
Langmuir
Paper
A novel approach to characterization of progressive breakdown in high-k/metal gate stacks
Abstract
Dielectric breakdown (BD) of nFETs with TiN metal gates and HfO2/interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for extraction of the PBD time and its dependence on gate voltage are reported. © 2008 Elsevier Ltd. All rights reserved.
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