Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Paper
A novel approach to characterization of progressive breakdown in high-k/metal gate stacks
Abstract
Dielectric breakdown (BD) of nFETs with TiN metal gates and HfO2/interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for extraction of the PBD time and its dependence on gate voltage are reported. © 2008 Elsevier Ltd. All rights reserved.
Related
Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Eloisa Bentivegna
Big Data 2022