Conference paper
Compression for data archiving and backup revisited
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Dielectric breakdown (BD) of nFETs with TiN metal gates and HfO2/interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for extraction of the PBD time and its dependence on gate voltage are reported. © 2008 Elsevier Ltd. All rights reserved.
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008