A new methodology for characterizing the progressive BD of HfO ₂/SiO₂ metal gate stacks

Abstract

Dielectric breakdown (BD) of nFETs with TiN metal gates and MO 2/interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for the characteristic growth time and its dependence on gate voltage are reported. © The Electrochemical Society.