SBMicro 2008
Conference paper

A new methodology for characterizing the progressive BD of HfO 2/SiO2 metal gate stacks

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Dielectric breakdown (BD) of nFETs with TiN metal gates and MO 2/interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for the characteristic growth time and its dependence on gate voltage are reported. © The Electrochemical Society.