John D. Cressler, James H. Comfort, et al.
IEEE Transactions on Electron Devices
We report the fabrication of silicon heterojunction bipolar transistors which have a record unity-current-gain cutoff frequency (fT) of 75 GHz for a collector-base bias of 1 V, an intrinsic base sheet resistance (Rbi) of 17 kΩ/∧, and an emitter width of 0.9 µm. This performance level, which represents almost a factor of 2 increase in the speed of a Si bipolar transistor, was achieved in a poly-emitter bipolar process by using SiGe for the base material. The germanium was graded in the 45-nm base to create a drift field of approximately 20 kV/cm, resulting in an intrinsic transit time of only 1.9 ps. © 1990 IEEE
John D. Cressler, James H. Comfort, et al.
IEEE Transactions on Electron Devices
Joachim N. Burghartz, Andrew C. Megdanis, et al.
IEEE Electron Device Letters
Joachim N. Burghartz, John D. Cressler, et al.
IEEE Electron Device Letters
Emmanuel F. Crabbé, James H. Comfort, et al.
IEEE Electron Device Letters