IEDM 2011
Conference paper

3D copper TSV integration, testing and reliability

View publication


Node-agnostic Cu TSVs integrated with high-K/metal gate and embedded DRAM were used in functional 3D modules. Thermal cycling and stress results show no degradation of TSV or BEOL structures, and device and functional data indicate that there is no significant impact from TSV processing and/or proximity. © 2011 IEEE.