Miaomiao Wang

Miaomiao Wang received her B.S. degree in Electrical Engineering from Peking University in 2003 and furthered her education by obtaining a Ph.D. in the same field from Yale University in 2008. The same year, she embarked on her professional journey with IBM @ Albany Nanotech Center as a research staff member. Miaomiao has led the transistor reliability work in Albany from 14nm to 2nm technology nodes and has made significant contributions to the reliability understanding and improvement of various advanced CMOS device structures including FinFET, SiGe FinFET, Nanosheet, and Vertical FET. She is currently manager of the reliability team at IBM’s semiconductor research division. She and her team’s responsibilities revolve around advanced reliability research for present and emerging logic devices, interconnects, and memory technologies. Miaomiao is a senior IEEE member. She has been invited to give several talks, tutorials, and panel discussions on subjects related to device reliability. She also served as the technical subcommittee member at numerous international conferences, including 2017 and 2018 IEEE International Electron Devices Meeting and 2017, 2022, 2023, 2024 IEEE International Reliability Physics Symposium.