Eric Miller, Indira Seshadri, et al.
SPIE Advanced Lithography 2022
Stacked Gate-All-Around (GAA) nanosheet pFETs with compressively strained Si1-xGex channel have been fabricated to explore their electrical benefits. The Si1-xGex NS channel structure with high crystalline quality and 1GPa compressive stress has been realized for the first time. Systematic study has been performed to understand the effect of epitaxial Si1-xGex thickness, Ge fraction, and Si cap thickness on the Si1-xGex NS channel device characteristics. It is found that the compressively strained Si1-xGex NS channel provides a 100% uplift in peak hole mobility with a corresponding channel resistance reduction of 40% while maintaining an excellent subthreshold slope of below 70 mV/dec.
Eric Miller, Indira Seshadri, et al.
SPIE Advanced Lithography 2022
Alberto Valdes Garcia
IMS 2024
Heinz Schmid
FAME 2023
Nanbo Gong, W. Chien, et al.
VLSI Technology 2020