Ruqiang Bao, K. Watanabe, et al.
VLSI Technology 2020
Conference paper
SiGe Gate-All-around Nanosheet Reliability
Abstract
In this paper, we present a detailed study of negative bias temperature instability (NBTI) and Time dependent dielectric breakdown (TDDB) reliability in p-type stacked gate- all -around (GAA) Nanosheet (NS) transistors with SiGe channel and compared with NS Si pFETs. Robust NBTI and TDDB reliability performance is achieved on SiGe gate-all-around NS.
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