The impact of hole-induced electromigration on the cycling endurance of phase change memoryM. H. LeeR. Cheeket al.2010IEDM 2010
Switching distributions and write reliability of perpendicular spin torque MRAMD.C. WorledgeG. Huet al.2010IEDM 2010
Device, circuit and system-level analysis of noise in multi-bit phase-change memoryGael F. CloseUrs Freyet al.2010IEDM 2010
High reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibilityTakeshi NogamiTibor Bolomet al.2010IEDM 2010