IEDM 2010
Conference paper

Voltage polarity effects in GST-based phase change memory: Physical origins and implications

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We show that bias polarity can greatly accelerate device failure in GSTbased (GeSbTe) PCM devices, and trace this effect to elemental segregation, initially driven by bias across the melt but then enhanced during the crystallization process. Implications include device, pulse, and materials design for high endurance. ©2010 IEEE.