Hysteretic drain-current behavior due to random telegraph noise in scaled-down FETs with high-κ/metal-gate stacks
- Hiroshi Miki
- Naoki Tega
- et al.
- 2010
- IEDM 2010
Conference paper
Publications
14 results at IEDM 2010
Switching distributions and write reliability of perpendicular spin torque MRAM
- D.C. Worledge
- G. Hu
- et al.
- 2010
- IEDM 2010
Conference paperDevice, circuit and system-level analysis of noise in multi-bit phase-change memory
- Gael F. Close
- Urs Frey
- et al.
- 2010
- IEDM 2010
Conference paperHigh reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility
- Takeshi Nogami
- Tibor Bolom
- et al.
- 2010
- IEDM 2010
Conference paperReliability and structural design of a wafer-level 3D integration scheme with W TSVs based on Cu-oxide hybrid wafer bonding
- K.N. Chen
- T.M. Shaw
- et al.
- 2010
- IEDM 2010
Conference paperWafer scale fabrication of carbon nanotube FETs with embedded poly-gates
- Shu-Jen Han
- Josephine Chang
- et al.
- 2010
- IEDM 2010
Conference paperThe impact of hole-induced electromigration on the cycling endurance of phase change memory
- M. H. Lee
- R. Cheek
- et al.
- 2010
- IEDM 2010
Conference paperHigh on-off ratio bilayer graphene complementary field effect transistors
- Kausik Majumdar
- Kota V. R. M. Murali
- et al.
- 2010
- IEDM 2010
Conference paperAn anomalous correlation between gate leakage current and threshold voltage fluctuation in advanced MOSFETs
- Zihong Liu
- Paul Chang
- et al.
- 2010
- IEDM 2010
Conference paperA 0.039um2 high performance eDRAM cell based on 32nm high-K/metal SOI technology
- Nauman Z. Butt
- Kevin McStay
- et al.
- 2010
- IEDM 2010
Conference paper