A comparative device and performance analysis between a SiGe epitaxial-base HBT and a si double-poly I/I BJT npn structureMario M. PelellaPhung T. Nguyenet al.1992BCTM 1992
Power partition and emitter size optimization for bipolar ECL circuitH.Y. HsiehKen Chinet al.1992BCTM 1992
A low-power static frequency divider circuit in bipolar technologyKai Y. TohYen C. Tzenget al.1992BCTM 1992
Modeling the Small-Emitter Effect in Polysilicon-Emitter TransistorsL. WagnerK.M. Kimet al.1992BCTM 1992