Kinetics and mechanisms of surface reactions in epitaxial growth of Si from SiH4 and Si2H6
- S. Gates
- 1992
- Journal of Crystal Growth
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Solubilities, defect reactions and doping limits in ZnSe
- Chris G. Van de Walle
- D.B. Laks
- et al.
- 1992
- Journal of Crystal Growth
Simulation with animation: microscopic growth kinetics of Si(001) homoepitaxy
- M.R. Wilby
- M.W. Ricketts
- et al.
- 1991
- Journal of Crystal Growth
Control of misoriented grains and pinholes in CoSi2 grown on Si(001)
- L.J. Schowalter
- J.R. Jimenez
- et al.
- 1991
- Journal of Crystal Growth
Use of CCl4 and CHCl3 in gas source molecular beam epitaxy for carbon doping of GaAs and GaxIn1-xP
- T.J. de Lyon
- N.I. Buchan
- et al.
- 1991
- Journal of Crystal Growth
Si/SiGe heterostructures grown on SOI substrates by MBE for integrated optoelectronics
- V.P. Kesan
- P.G. May
- et al.
- 1991
- Journal of Crystal Growth
Dopant incorporation in epitaxial germanium grown on Ge(100) substrates by MBE
- V.P. Kesan
- Subramanian S. Iyer
- et al.
- 1991
- Journal of Crystal Growth
Growth and novel properties of magnetic heterostructures by molecular beam epitaxy
- J.M. Hong
- D.D. Awschalom
- et al.
- 1991
- Journal of Crystal Growth
GaAs buffer layers grown at low substrate temperatures using As2 and the formation of arsenic precipitates
- M.R. Melloch
- K. Mahalingam
- et al.
- 1991
- Journal of Crystal Growth
A simple way to reduce series resistance in p-doped semiconductor distributed Bragg reflectors
- M. Hong
- J.P. Mannaerts
- et al.
- 1991
- Journal of Crystal Growth