Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
We have grown GaAs layers by molecular beam epitaxy at low substrate temperatures (250°C) using the dimer arsenic source As2. Following a one hour anneal at 600°C, the GaAs layers were examined with transmission electron microscopy. The GaAs layers contained arsenic precipitates of average diameter 100 Å and density of 1017 cm-3. © 1991.
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
R. Ghez, M.B. Small
JES
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997