P-Type diluted magnetic III-V semiconductors

Abstract

Diluted magnetic III-V semiconductors In1-xMnxAs with p-type conduction have been successfully grown by molecular beam epitaxy under the specific growth conditions of substrate temperatures above 275°C with Mn compositions 0.001 {less-than or approximate} × {less-than or approximate} 0.03. No MnAs second phase was detected in these films in which the Mn ions serve the dual purpose of providing conduction holes and local spins. Hole concentrations fall in the range of 5 × 1017 to 1020 cm-3 depending on the Mn composition, and they can be varied with donor impurities such as Sn. Magnetotransport at low temperatures exhibits striking hysteretic characteristics, suggesting the occurrence of ferrogmagnetic order induced by the presence of holes. © 1991.