About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Journal of Crystal Growth
Paper
P-Type diluted magnetic III-V semiconductors
Abstract
Diluted magnetic III-V semiconductors In1-xMnxAs with p-type conduction have been successfully grown by molecular beam epitaxy under the specific growth conditions of substrate temperatures above 275°C with Mn compositions 0.001 {less-than or approximate} × {less-than or approximate} 0.03. No MnAs second phase was detected in these films in which the Mn ions serve the dual purpose of providing conduction holes and local spins. Hole concentrations fall in the range of 5 × 1017 to 1020 cm-3 depending on the Mn composition, and they can be varied with donor impurities such as Sn. Magnetotransport at low temperatures exhibits striking hysteretic characteristics, suggesting the occurrence of ferrogmagnetic order induced by the presence of holes. © 1991.